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? semiconductor components industries, llc, 2012 september, 2012 ? rev. 9 1 publication order number: bc846bdw1t1/d bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g dual general purpose transistors npn duals these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 363/sc ? 88 which is designed for low power surface mount applications. features ? s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol bc846 bc847 bc848 unit collector ? emitter voltage v ceo 65 45 30 v collector ? base voltage v cbo 80 50 30 v emitter ? base voltage v ebo 6.0 6.0 5.0 v collector current ? continuous i c 100 100 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation per device fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 x 0.75 x 0.062 in *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 363 case 419b style 1 marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 1x = specific device code x = b, f, g, l m = date code = pb ? free package http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information (note: microdot may be in either location) 1x m 1 6
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma) bc846, sbc846 series bc847, sbc847 series, nsvbc847 bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage (i c = 10 a, v eb = 0) bc846, sbc846 series bc847, sbc847 series, nsvbc847 bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ? base breakdown voltage (i c = 10 a) bc846, sbc846 series bc847, sbc847 series, nsvbc847 bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ? base breakdown voltage (i e = 1.0 a) bc846, sbc846 series bc847, sbc847 series, nsvbc847 bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) bc846b, sbc846b, bc847b, sbc847b, nsvbc847 bc847c, sbc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846b, sbc846b, bc847b, sbc847b, nsvbc847 bc847c, sbc847c, bc848c h fe ? ? 200 420 150 270 290 520 ? ? 450 800 ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ? emitter voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k ,f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 3 typical characteristics ? bc846bdw1t1g, sbc846bdw1t1g 0 100 200 300 400 500 600 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain figure 1. dc current gain at v ce = 5 v v ce = 5 v 150 c 25 c ? 55 c 0 100 200 300 400 500 600 0.001 0.01 0.1 1 v ce = 10 v 150 c 25 c ? 55 c i c , collector current (a) h fe , dc current gain figure 2. dc current gain at v ce = 10 v 0.00 0.05 0.10 0.15 0.20 0.25 0.0001 0.001 0.01 0.1 v ce(sat) , coll ? emitt saturation voltage (v) i c , collector current (a) figure 3. v ce(sat) at i c /i b = 10 150 c 25 c ? 55 c i c /i b = 10 0 0.05 0.1 0.15 0.2 0.25 0.3 0.0001 0.001 0.01 0.1 v ce(sat) , coll ? emitt saturation voltage (v) i c , collector current (a) figure 4. v ce(sat) at i c /i b = 20 i c /i b = 20 150 c ? 55 c 25 c 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 0.0001 0.001 0.01 0.1 v be(sat) , base ? emitt saturation voltage (v) i c , collector current (a) figure 5. v be(sat) at i c /i b = 10 i c /i b = 10 150 c 25 c ? 55 c 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 0.0001 0.001 0.01 0.1 v be(sat) , base ? emitt saturation voltage (v) i c , collector current (a) figure 6. v be(sat) at i c /i b = 20 i c /i b = 20 150 c 25 c ? 55 c
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 4 typical characteristics ? bc846bdw1t1g, sbc846bdw1t1g 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 0.0001 0.001 0.01 0.1 i c , collector current (a) v be(on) , base ? emitter voltage (v) figure 7. v be(on) at v ce = 5 v 150 c 25 c ? 55 c v ce = 5 v 10 100 1000 0.1 1 10 100 i c , collector current (a) figure 8. current ? gain ? bandwidth product f t , current ? gain ? bandwidth product v ce = 10 v t a = 25 c 1 10 0.1 1 10 100 c, capacitance (pf) v r , reverse voltage (v) figure 9. capacitances c ob c ib t a = 25 c i c = 20 ma i c = 50 ma i c = 100 ma t a = 25 c v ce , collector ? emitter voltage (v) i b , base current (ma) figure 10. collector saturation region i c = 10 ma 0.1 1 10 100 i b , base current (ma) figure 11. base ? emitter temperature coefficient vb , temperature coefficient (mv/ c) ? 55 c to 150 c vb , for v be ? 0.2 ? 0.6 ? 1 ? 1.4 ? 1.8 ? 2.2 ? 2.6 ? 3 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 v ce = 5 v
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 5 typical characteristics ? bc847bdw1t1g, sbc847bdw1t1g, NSVBC847BDW1T2G 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain figure 12. dc current gain at v ce = 5 v v ce = 5 v 150 c 25 c ? 55 c 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 v ce = 10 v 150 c 25 c ? 55 c i c , collector current (a) h fe , dc current gain figure 13. dc current gain at v ce = 10 v 0.00 0.05 0.10 0.15 0.20 0.25 0.0001 0.001 0.01 0.1 v ce(sat) , coll ? emitt saturation voltage (v) i c , collector current (a) figure 14. v ce at i c /i b = 10 150 c 25 c ? 55 c i c /i b = 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0001 0.001 0.01 0.1 v ce(sat) , coll ? emitt saturation voltage (v) i c , collector current (a) figure 15. v ce at i c /i b = 20 i c /i b = 20 150 c ? 55 c 25 c 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0.0001 0.001 0.01 0.1 v be(sat) , base ? emitt saturation voltage (v) i c /i b = 10 150 c 25 c ? 55 c i c , collector current (a) figure 16. v be(sat) at i c /i b = 10 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0.0001 0.001 0.01 0.1 v be(sat) , base ? emitt saturation voltage (v) i c , collector current (a) figure 17. v be(sat) at i c /i b = 20 i c /i b = 20 150 c 25 c ? 55 c
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 6 typical characteristics ? bc847bdw1t1g, sbc847bdw1t1g, NSVBC847BDW1T2G 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 0.0001 0.001 0.01 0.1 i c , collector current (a) v be(on) , base ? emitter voltage (v) figure 18. v be(on) at v ce = 5 v v ce = 5 v 150 c 25 c ? 55 c 10 100 1000 0.1 1 10 100 i c , collector current (a) figure 19. current ? gain ? bandwidth product f t , current ? gain ? bandwidth product v ce = 10 v t a = 25 c 1 10 0.1 1 10 100 c, capacitance (pf) v r , reverse voltage (v) figure 20. capacitances c ob c ib t a = 25 c 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 i c = 20 ma i c = 50 ma i c = 100 ma t a = 25 c v ce , collector ? emitter voltage (v) i b , base current (ma) figure 21. collector saturation region i c = 10 ma 0.1 1 10 100 i b , base current (ma) figure 22. base ? emitter temperature coefficient vb , temperature coefficient (mv/ c) ? 55 c to 150 c vb , for v be ? 0.2 ? 0.6 ? 1 ? 1.4 ? 1.8 ? 2.2 ? 2.6 ? 3 v ce = 5 v
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 7 typical characteristics ? bc848cdw1t1g, sbc848cdw1t1g 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain figure 23. dc current gain at v ce = 5 v v ce = 5 v 150 c 25 c ? 55 c 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 v ce = 10 v 150 c 25 c ? 55 c i c , collector current (a) h fe , dc current gain figure 24. dc current gain at v ce = 10 v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.0001 0.001 0.01 0.1 v ce(sat) , coll ? emitt saturation voltage (v) i c , collector current (a) figure 25. v ce at i c /i b = 10 150 c 25 c ? 55 c i c /i b = 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0001 0.001 0.01 0.1 v ce(sat) , coll ? emitt saturation voltage (v) i c , collector current (a) figure 26. v ce at i c /i b = 20 i c /i b = 20 150 c ? 55 c 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0001 0.001 0.01 0.1 v be(sat) , base ? emitt saturation voltage (v) i c , collector current (a) figure 27. v be(sat) at i c /i b = 10 i c /i b = 10 150 c 25 c ? 55 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 v be(sat) , base ? emitt saturation voltage (v) i c , collector current (a) figure 28. v be(sat) at i c /i b = 20 i c /i b = 20 150 c 25 c ? 55 c
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 8 typical characteristics ? bc848cdw1t1g, sbc848cdw1t1g 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.001 0.01 0.1 i c , collector current (a) v be(on) , base ? emitter voltage (v) figure 29. v be(on) at v ce = 5 v v ce = 5 v 150 c 25 c ? 55 c 10 100 1000 0.1 1 10 100 i c , collector current (a) figure 30. current ? gain ? bandwidth product f t , current ? gain ? bandwidth product v ce = 10 v t a = 25 c 1 10 0.1 1 10 100 c, capacitance (pf) v r , reverse voltage (v) figure 31. capacitances c ob c ib t a = 25 c i c = 10 ma i c = 20 ma i c = 50 ma i c = 100 ma t a = 25 c v ce , collector ? emitter voltage (v) i b , base current (ma) figure 32. collector saturation region 0.1 1 10 100 i b , base current (ma) figure 33. base ? emitter temperature coefficient ? 0.2 ? 0.6 ? 1 ? 1.4 ? 1.8 ? 2.2 ? 2.6 ? 3 vb , temperature coefficient (mv/ c) ? 55 c to 150 c vb , for v be v ce = 5 v
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 9 figure 34. thermal response t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k figure 35. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 35 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 34. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 1.0m 0.02 0.01
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 10 ordering information device markings package shipping ? bc846bdw1t1g 1b sot ? 363 (pb ? free) 3,000 / tape & reel sbc846bdw1t1g* 1b sot ? 363 (pb ? free) 3,000 / tape & reel bc847bdw1t1g 1f sot ? 363 (pb ? free) 3,000 / tape & reel sbc847bdw1t1g* 1f sot ? 363 (pb ? free) 3,000 / tape & reel bc847bdw1t3g 1f sot ? 363 (pb ? free) 10,000 / tape & reel sbc847bdw1t3g* 1f sot ? 363 (pb ? free) 10,000 / tape & reel NSVBC847BDW1T2G* 1f sot ? 363 (pb ? free) 10,000 / tape & reel bc847cdw1t1g 1g sot ? 363 (pb ? free) 3,000 / tape & reel sbc847cdw1t1g* 1g sot ? 363 (pb ? free) 3,000 / tape & reel bc848cdw1t1g 1l sot ? 363 (pb ? free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable.
bc846bdw1t1g, sbc846bdw1t1g, bc847bdw1t1g, sbc847bdw1t1g series, NSVBC847BDW1T2G, bc848cdw1t1g http://onsemi.com 11 package dimensions sc ? 88 (sc70 ? 6/sot ? 363) case 419b ? 02 issue w style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 scale 20:1 0.50 0.0197 1.9 0.0748 0.65 0.025 0.65 0.025 0.40 0.0157 mm inches *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc846bdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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